SDT1061

Technical Characteristics

• Overall Width

  1.050 inches maximum

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  325.0 minimum breakdown voltage, collector to emitter, sustained and 400.0 minimum breakdown voltage, collector-to-emitter, with specified circuit between base and emitter and 8.0 minimum breakdown voltage, emitter-to-base, collector open

• Mounting Facility Quantity

  2

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 case

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Electrode Internally-Electrically Connected To Case

  collector

• Current Rating Per Characteristic

  3.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum

• Precious Material And Location

  terminal surface gold

• Overall Length

  1.573 inches maximum

• Overall Height

  0.250 inches minimum and 0.450 inches maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Test Data Document

  86360-742c2030-18 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)