649A847H01

Technical Characteristics

• Semiconductor Material

  silicon

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Power Rating Per Characteristic

  4.0 watts small-signal input power, common-collector minimum

• Features Provided

  hermetically sealed case

• Test Data Document

  97942-649a847 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Internal Configuration

  junction contact

• Current Rating Per Characteristic

  2.00 amperes source cutoff current maximum

• Overall Diameter

  0.352 inches nominal

• Overall Length

  0.250 inches nominal

• Inclosure Material

  metal

• Voltage Rating In Volts Per Characteristic

  100.0 maximum breakdown voltage, collector-to-emitter, base open and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 6.0 maximum breakdown voltage, emitter-to-base, collector open

• Special Features

  junction pattern arrangement: pnp

• Terminal Length

  1.650 inches nominal

• Terminal Circle Diameter

  0.200 inches nominal

• Mounting Method

  terminal

• Terminal Type And Quantity

  3 uninsulated wire lead

• Electrode Internally-Electrically Connected To Case

  collector