86SV434
Semiconductor Devices and Associated Hardware
TRANSISTOR
86SV434
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
glass and metal
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
threaded stud
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Nominal Thread Size
0.250 inches
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 8.0 maximum
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Terminal Type And Quantity
3 tab, solder lug
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Overall Length
0.536 inches maximum
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Terminal Length
0.295 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown v
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~2
oltage, emitter-to-base, collector open
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Current Rating Per Characteristic
10.00 microamperes maximum collector cutoff current, dc, emitter open
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Power Rating Per Characteristic
100.0 watts maximum total power dissipation
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Thread Series Designator
unf