2N1213

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N1213

5961-00-852-5265

5961 - Semiconductor Devices and Associated Hardware

Lockheed Martin Corp

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Internal Configuration

    junction contact

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5

  • Internal Junction Configuration

    pnp

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    germanium

  • Voltage Rating In Volts Per Characteristic

    m25.0 maximum collector to base voltage,dc and m25.0 maximum collector to emitter voltage,dc and m1.0 maximum emitter to base voltage,dc

  • Current Rating Per Characteristic

    m100.00 milliamperes maximum collector current,dc and 100.00 milliamperes maximum emitter current,dc

  • Power Rating Per Characteristic

    75.0 milliwatts maximum collector power dissipation

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Overall Length

    0.260 inches maximum

  • Terminal Length

    1.500 inches minimum

  • Overall Diameter

    0.370 inches maximum

  • Maximum Operating Temp Per Measurement Point

    71.0 deg celsius ambient air

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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