301-314
Semiconductor Devices and Associated Hardware
TRANSISTOR
301-314
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-57
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
m emitter to base voltage, static, collector open and 120.0 maximum breakdown vo
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Current Rating Per Characteristic
500.00 milliamperes maximum collector current, dc and 500.00 milliamperes maximu
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Transfer Ratio
90.0 maximum static forward current transfer ratio, common-emitter
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Inclosure Material
metal
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Overall Length
0.215 inches maximum
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Overall Diameter
0.460 inches maximum
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Internal Configuration
junction contact
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material And Location
leads gold
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Precious Material
gold
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Thread Series Designator
unf
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Terminal Type And Quantity
2 pin and 1 threaded stud
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Nominal Thread Size
0.138 inches
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~2
ltage, collector-to-emitter, base open
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 10.0 maximu
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~1
m base current, dc
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Power Rating Per Characteristic
228.0 milliwatts maximum collector power dissipation