M38510/21002BJB

Technical Characteristics

• Test Data Document

  82918-675-80880 drawing

• Unpackaged Unit Weight

  6.5 grams

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic and glass

• Features Provided

  hermetically sealed and monolithic and programmable and bipolar and schottky and 3-state output and high impedance

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Maximum Power Dissipation Rating

  1.02 watts

• Body Height

  0.150 inches minimum and 0.210 inches maximum

• Terminal Type And Quantity

  24 printed circuit

• Memory Device Type

  rom

• Time Rating Per Chacteristic

  100.00 nanoseconds maximum propagation delay time,low to high level output and 100.00 nanoseconds maximum propagation delay time,high to low level output

• Voltage Rating And Type Per Characteristic

  5.5 volts nominal power source

• Word Quantity

  2048

• Bit Quantity

  16384

• Input Circuit Pattern

  14 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Body Length

  1.290 inches maximum