8500065-128
Semiconductor Devices and Associated Hardware
TRANSISTOR
8500065-128
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Internal Configuration
field effect-dual gate
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Power Rating Per Characteristic
6.3 watts small-signal input power, common-collector preset
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
15.0 maximum forward gate to source breakdown voltage and 60.0 maximum drain to source voltage and 60.0 maximum drain to gate voltage
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.360 inches nominal
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Inclosure Material
metal
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Current Rating Per Characteristic
2.00 milliamperes zero-gate-voltage source current horsepower metric and 2.00 amperes source cutoff current maximum of standard range
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-39
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Overall Length
0.250 inches minimum