3N166
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N166
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Overall Length
0.170 inches nominal
-
Internal Configuration
field effect-dual gate
-
Voltage Rating In Volts Per Characteristic
40.0 maximum reverse gate to source voltage and -40.0 maximum forward gate to source voltage and -40.0 maximum drain to source voltage and -40.0 maximum drain to gate voltage
-
Terminal Type And Quantity
6 ribbon
-
Semiconductor Material
silicon
-
Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
-
Current Rating Per Characteristic
-50.00 milliamperes source cutoff current maximum of standard range
-
Terminal Length
0.500 inches minimum
-
Overall Diameter
0.352 inches nominal
-
Inclosure Material
metal
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-99
-
Power Rating Per Characteristic
525.0 milliwatts small-signal input power, common-collector preset