NSN: 5961-00-840-8816
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
150.0 milliwatts maximum collector power dissipation
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Current Rating Per Characteristic
-100.00 milliamperes maximum collector current, dc and 100.00 milliamperes maxim
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~1
um base current, dc
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~3
and -5.0 maximum breakdown voltage, emitter-to-base, collector open
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~2
and emitter and -6.0 maximum breakdown voltage, collector-to-emitter, base open
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~1
um breakdown voltage, collector-to-emitter, with specified circuit between base
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.100 inches nominal
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Mounting Method
terminal
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Internal Junction Configuration
npn
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Internal Configuration
junction contact
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Overall Diameter
0.230 inches maximum
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
-15.0 maximum breakdown voltage, collector-to-base, emitter open and -13.0 maxim
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Terminal Length
0.500 inches minimum
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Overall Length
0.210 inches maximum