NSN: 5961-01-104-3835

Technical Characteristics

• Semiconductor Material

  silicon

• Voltage Rating In Volts Per Characteristic

  60.0 maximum breakdown voltage, collector-to-base, emitter open and 60.0 maximum breakdown voltage, collector-to-emitter, base open and 6.5 maximum breakdown voltage, emitter-to-base, collector open

• Power Rating Per Characteristic

  300.0 milliwatts maximum collector power dissipation

• Terminal Type And Quantity

  3 uninsulated wire lead

• Inclosure Material

  plastic

• Overall Length

  0.120 inches minimum and 0.240 inches maximum

• Terminal Length

  0.500 inches minimum

• Overall Diameter

  0.305 inches minimum and 0.325 inches maximum

• Terminal Circle Diameter

  0.200 inches nominal

• Current Rating Per Characteristic

  1.00 amperes maximum collector current, dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Special Features

  junction pattern arrangement: npn

• Internal Configuration

  junction contact

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-105

• Mounting Method

  terminal