C10FR581G
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
C10FR581G
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Current Rating Per Characteristic
60.00 amperes forward current, average absolute
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector blank
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Mounting Method
threaded stud
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Overall Width Across Flats
0.424 inches minimum and 0.437 inches maximum
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Test Data Document
98230-0n149987 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakover voltage, dc
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius case
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Overall Length
1.204 inches nominal