2N336
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N336
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Terminal Circle Diameter
0.200 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
150.0 milliwatts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Test Data Document
10001-2284692 drawing
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.245 inches nominal
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Terminal Length
1.500 inches minimum
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Overall Diameter
0.350 inches nominal
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
45.0 maximum breakdown voltage,collector-to-base,emitter open and 1.0 maximum breakdown voltage,emitter-to-base,collector open
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Current Rating Per Characteristic
25.00 milliamperes maximum collector current,instantaneous