3N200
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N200
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Circle Diameter
0.100 inches nominal
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum of standard range and 1.00 milliamperes source cutoff current minor
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
15.0 maximum drain to source voltage and 20.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 6.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
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Power Rating Per Characteristic
330.0 milliwatts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Overall Diameter
0.230 inches nominal
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Terminal Length
0.500 inches minimum
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Overall Length
0.188 inches nominal
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Specification/Standard Data
80131-release6131 professional/industrial association specification
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Internal Configuration
field effect
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead