HRN1030-03
Semiconductor Devices and Associated Hardware
TRANSISTOR
HRN1030-03
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Channel Polarity And Control Type
p-channel insulated gate type
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Electrode Internally-Electrically Connected To Case
base
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Mounting Method
terminal
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Test Data Document
10001-2666282 drawing
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Terminal Length
0.500 inches minimum
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Inclosure Material
metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Internal Configuration
field effect
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
6.0 maximum gate to substrate voltage and 6.0 maximum gate to source voltage and 6.0 maximum gate non-trigger voltage, dc
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Power Rating Per Characteristic
0.20 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Type And Quantity
4 uninsulated wire lead