2N5875
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5875
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector minimum
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Special Features
weapon system essential; junction pattern arrangement: npn
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Criticality Code Justification
feat
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Overall Length
1.573 inches maximum
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Specification/Standard Data
80131-release6104 professional/industrial association specification
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
80.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Features Provided
hermetically sealed case
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Terminal Type And Quantity
1 case and 2 pin
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Current Rating Per Characteristic
4.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum
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End Item Identification
forrestal class cv, teletype, model 28, kidd class ddg, arleigh burke class ddg, spruance class dd (963), nimitz class cvn, ticonderoga class cg (47), landing craft air cushion (lcac), all-weather anti-ship harpoon (agm-84), air to air phoenix (aim-54)
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~1
missle.
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Overall Height
0.450 inches maximum