40SE113
Semiconductor Devices and Associated Hardware
TRANSISTOR
40SE113
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Height
0.450 inches maximum
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Overall Width
1.050 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Internal Junction Configuration
npn
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Mounting Method
unthreaded hole
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Current Rating Per Characteristic
10.00 amperes maximum collector current,dc and 2.00 amperes maximum base current,dc
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Terminal Type And Quantity
2 pin and 1 case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
400.0 maximum collector to base voltage/static/emitter open and 200.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage,static,collector open
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Power Rating Per Characteristic
4.0 watts maximum total power dissipation
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Transfer Ratio
30.0 minimum static forward current transfer ratio,common-emitter
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Features Provided
hermetically sealed case
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact
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Mounting Facility Quantity
2
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Overall Length
1.573 inches maximum