USA2N930
Semiconductor Devices and Associated Hardware
TRANSISTOR
USA2N930
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general
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~1
type data on certain environmental and performa
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Current Rating Per Characteristic
30.00 milliamperes source cutoff current maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Specification/Standard Data
81349-mil-prf-19500/253 government specification
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 45.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector preset
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Circle Diameter
0.100 inches nominal