JAN2N1016B

Semiconductor Devices and Associated Hardware

TRANSISTOR

JAN2N1016B

5961-00-023-5602

5961 - Semiconductor Devices and Associated Hardware

Westinghouse Electric Corp

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Technical Characteristics

  • Inclosure Material

    metal

  • Mounting Facility Quantity

    1

  • Internal Configuration

    junction contact

  • Mounting Method

    threaded stud

  • Nominal Thread Size

    0.312 inches

  • Criticality Code Justification

    feat

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    1.4 watts maximum collector power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Special Features

    item must comply with requirements of desc production standard no. l00872; for navy nuclear propulsion plant products only

  • Overall Length

    0.546 inches maximum

  • Overall Diameter

    1.046 inches nominal

  • Internal Junction Configuration

    npn

  • Features Provided

    hermetically sealed case

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum breakdown voltage, collector-to-emitter, base open and 25.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    5.00 amperes maximum base current, dc and 7.50 amperes maximum collector current, dc

  • Thread Series Designator

    unf

  • Terminal Type And Quantity

    1 threaded stud and 2 tab, solder lug

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

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Providing Quality People

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