DMS 81016B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 81016B
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.275 inches minimum and 0.285 inches maximum
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Mounting Facility Quantity
1
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Internal Configuration
junction contact
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
55.0 maximum collector to base voltage/static/emitter open and 35.0 maximum collector to emitter voltage/static/base open
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Power Rating Per Characteristic
10.0 watts maximum total device dissipation
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Special Features
junction pattern arrangement: npn
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Terminal Type And Quantity
1 threaded stud and 3 ribbon
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Thread Series Designator
unc
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Current Rating Per Characteristic
0.75 amperes maximum collector current, dc
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Nominal Thread Size
0.164 inches
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Features Provided
hermetically sealed case
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Mounting Method
threaded stud