GS810FU1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
GS810FU1
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Semiconductor Material
silicon all semiconductor device diode
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Mounting Method
terminal
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Current Rating Per Characteristic
750.00 milliamperes forward current, average absolute 2nd semiconductor device diode
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Precious Material
silver
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Component Name And Quantity
2 semiconductor device diode
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Test Data Document
26512-gs810fu drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Precious Material And Location
leads silver
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Voltage Tolerance In Percent
-2.4/+2.4 1st semiconductor device diode
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Terminal Length
0.750 inches minimum
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Voltage Rating In Volts Per Characteristic
12.0 nominal nominal regulator voltage 1st semiconductor device diode
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Terminal Type And Quantity
2 uninsulated wire lead
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Features Provided
hermetically sealed case
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Voltage Rating In Volts Per Characteristic
100.0 maximum reverse voltage, peak 2nd semiconductor device diode
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Overall Length
0.422 inches nominal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Special Features
all semiconductor device diode junction pattern arrangement: pn
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Current Rating Per Characteristic
65.00 milliamperes source cutoff current horsepower metric 1st semiconductor device diode
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Inclosure Material
glass and metal
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Overall Diameter
0.085 inches maximum