68A13B199-2

Technical Characteristics

• Overall Width

  0.330 inches maximum

• Internal Configuration

  junction contact

• Electrode Internally-Electrically Connected To Case

  collector

• Features Provided

  hermetically sealed case

• Semiconductor Material

  silicon

• Power Rating Per Characteristic

  40.0 watts maximum collector power dissipation

• Terminal Type And Quantity

  3 turret

• Inclosure Material

  metal

• Overall Length

  0.450 inches maximum

• Overall Height

  0.130 inches maximum

• Mounting Facility Quantity

  1

• Internal Junction Configuration

  pnp

• Mounting Method

  unthreaded hole

• Voltage Rating In Volts Per Characteristic

  80.0 maximum breakdown voltage,collector-to-base,emitter open and 5.0 maximum breakdown voltage,emitter-to-base,collector open and 80.0 maximum breakdown voltage,collector-to-emitter,base open

• Current Rating Per Characteristic

  4.00 amperes maximum collector current,dc and 1.00 amperes maximum base current,dc

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction