1N649SPW
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
1N649SPW
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Inclosure Material
glass
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Terminal Length
1.000 inches minimum
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Mounting Method
terminal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
600.0 maximum reverse voltage,peak
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Precious Material And Location
leads gold
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Overall Length
0.300 inches maximum
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Overall Diameter
0.150 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
npn
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Current Rating Per Characteristic
0.40 amperes maximum average on-state current,180 degrees conduction angle,average over a full 60-hz cycle
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Power Rating Per Characteristic
0.6 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Precious Material
gold
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Terminal Type And Quantity
2 uninsulated wire lead