SD1768H
Semiconductor Devices and Associated Hardware
TRANSISTOR
SD1768H
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Test Data Document
97942-577r139 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Power Rating Per Characteristic
1.8 watts small-signal input power, common-collector preset
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Terminal Circle Diameter
0.090 inches minimum and 0.110 inches maximum
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Function For Which Designed
amplifier
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Semiconductor Material
silicon
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Overall Diameter
0.210 inches minimum and 0.225 inches maximum
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
terminal
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector to emitter, sustained and 100.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum breakdown voltage, emitter-to-base, collector open
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Terminal Length
0.500 inches minimum
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Internal Configuration
junction contact-darlington connected
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Inclosure Material
metal
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Terminal Type And Quantity
4 uninsulated wire lead
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Overall Length
0.170 inches minimum and 0.210 inches maximum