1205016P1

Semiconductor Devices and Associated Hardware

TRANSISTOR

1205016P1

5961-00-050-0102

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

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Technical Characteristics

  • Mounting Method

    threaded stud

  • Terminal Type And Quantity

    2 pin and 1 threaded stud

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Facility Quantity

    1

  • Nominal Thread Size

    0.190 inches

  • Thread Series Designator

    unf

  • Voltage Rating In Volts Per Characteristic

    65.0 maximum breakdown voltage, collector-to-emitter, base open and 80.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    15.00 amperes source cutoff current maximum

  • Special Features

    junction pattern arrangement: pnp

  • Internal Configuration

    junction contact

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Overall Length

    0.520 inches maximum

  • Features Provided

    hermetically sealed case

  • Power Rating Per Characteristic

    170.0 watts small-signal input power, common-collector minimum

  • Semiconductor Material

    germanium

  • Inclosure Material

    metal

  • Specification/Standard Data

    80131-release3582 professional/industrial association specification

Certified to
AS6081 Methods

Implementing Quality Procurement

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