5M5512-221-43

Semiconductor Devices and Associated Hardware

TRANSISTOR

5M5512-221-43

5961-00-054-4141

5961 - Semiconductor Devices and Associated Hardware

Eads Deutschland Gmbh -Verteidigung

TRANSISTOR

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Technical Characteristics

  • ~1

    type data on certain environmental and performa

  • Overall Width

    0.700 inches maximum

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current minimum and 3.00 amperes source cutoff current maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-66

  • Electrode Internally-Electrically Connected To Case

    collector

  • Power Rating Per Characteristic

    25.0 watts small-signal input power, common-collector preset

  • Voltage Rating In Volts Per Characteristic

    150.0 maximum collector to emitter reverse voltage and 160.0 maximum collector to base voltage/static/emitter open and 140.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static, collector open

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air

  • Specification/Standard Data

    81349-mil-s-19500/369 government specification

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Overall Height

    0.340 inches nominal

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Overall Length

    1.252 inches maximum

  • Test Data Document

    81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general

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