5M5512-221-43
Semiconductor Devices and Associated Hardware
TRANSISTOR
5M5512-221-43
5961 - Semiconductor Devices and Associated Hardware
Eads Deutschland Gmbh -Verteidigung
TRANSISTOR
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Technical Characteristics
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~1
type data on certain environmental and performa
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Overall Width
0.700 inches maximum
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Current Rating Per Characteristic
2.00 amperes source cutoff current minimum and 3.00 amperes source cutoff current maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector preset
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Voltage Rating In Volts Per Characteristic
150.0 maximum collector to emitter reverse voltage and 160.0 maximum collector to base voltage/static/emitter open and 140.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Specification/Standard Data
81349-mil-s-19500/369 government specification
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Height
0.340 inches nominal
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Overall Length
1.252 inches maximum
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Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general