2N1532A
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1532A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Special Features
junction pattern arrangement: pnp
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Overall Diameter
0.800 inches maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
10.00 amperes source cutoff current maximum
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Overall Length
0.410 inches maximum
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Mounting Facility Quantity
2
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Mounting Method
unthreaded hole
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Semiconductor Material
germanium
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Terminal Type And Quantity
3 pin
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Inclosure Material
metal
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Power Rating Per Characteristic
90.0 watts small-signal input power, common-collector minimum
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, base open and 75.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 100.0 maximum breakdown
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~1
voltage, collector-to-emitter, with specifie