RM6609

Technical Characteristics

• Input Circuit Pattern

  triple 3 input

• Test Data Document

  12464-b77t0028 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Body Width

  0.240 inches minimum and 0.260 inches maximum

• Output Logic Form

  diode-transistor logic

• Precious Material

  gold

• Precious Material And Location

  terminals gold

• Design Function And Quantity

  3 gate, nand-nor

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  80.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Body Length

  0.240 inches minimum and 0.275 inches maximum

• Body Height

  0.030 inches minimum and 0.070 inches maximum

• Inclosure Material

  ceramic and glass

• Features Provided

  low power and hermetically sealed and monolithic and positive outputs and low power

• Case Outline Source And Designator

  t0-86 joint electron device engineering council

• Maximum Power Dissipation Rating

  48.8 milliwatts