2N2012
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N2012
5961 - Semiconductor Devices and Associated Hardware
Gilbert Engineering Co Inc/Incon
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Voltage Rating In Volts Per Characteristic
200.0 maximum breakover voltage, dc
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Specification/Standard Data
80131-release4400 professional/industrial association specification
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Overall Length
0.260 inches maximum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
1.30 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Special Features
junction pattern arrangement: pnpn
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Inclosure Material
metal
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Power Rating Per Characteristic
0.5 watts small-signal input power, common-collector blank