2N1100

Technical Characteristics

• Mounting Method

  threaded stud

• Mounting Facility Quantity

  1

• Nominal Thread Size

  0.190 inches

• Thread Series Designator

  unf

• Special Features

  junction pattern arrangement: pnp

• Internal Configuration

  junction contact

• Features Provided

  hermetically sealed case

• Overall Length

  0.625 inches maximum

• Semiconductor Material

  germanium

• Current Rating Per Characteristic

  4.00 amperes zero-gate-voltage source current megahertz and 13.00 amperes forward current, average megahertz

• Inclosure Material

  metal

• Terminal Type And Quantity

  2 uninsulated wire lead and 1 threaded stud

• Voltage Rating In Volts Per Characteristic

  -100.0 maximum collector to base voltage, dc and -80.0 maximum emitter to base voltage, instantaneous