2N3668
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N3668
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakover voltage, dc
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Electrode Internally-Electrically Connected To Case
anode
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Overall Diameter
0.875 inches maximum
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Power Rating Per Characteristic
5.0 watts small-signal input power, common-collector blank
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
13.00 amperes source cutoff current maximum
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Overall Length
0.450 inches maximum
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Semiconductor Material
silicon
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Specification/Standard Data
80131-release4898 professional/industrial association specification