19A115196
Semiconductor Devices and Associated Hardware
TRANSISTOR
19A115196
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Facility Quantity
2
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Features Provided
hermetically sealed case
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Semiconductor Material
germanium
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Current Rating Per Characteristic
3.00 amperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Inclosure Material
metal
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Overall Length
0.350 inches nominal
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Mounting Method
unthreaded hole
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Voltage Rating In Volts Per Characteristic
-60.0 maximum breakdown voltage, collector-to-base, emitter open and -10.0 maximum breakdown voltage, emitter-to-base, collector open and -80.0 maximum collector to emitter voltage, dc with base short-circuited to emitter
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Power Rating Per Characteristic
90.0 watts maximum collector power dissipation
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case