JAN2N1913
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
JAN2N1913
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Specification/Standard Data
81349-mil-s-19500/204 government specification
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Thread Series Designator
unf
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Manufacturers Code
81349
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Current Rating Per Characteristic
2.00 amperes maximum drain current and 50.00 amperes maximum average on-state current, 180 degrees conduction angle, average over a full 60-hz cycle
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Voltage Rating In Volts Per Characteristic
10.0 maximum off-state voltage, peak and 200.0 maximum off-state voltage, rms total and 5.0 maximum gate voltage, dc
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Semiconductor Material
silicon
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Nominal Thread Size
0.500 inches
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Overall Width Across Flats
1.031 inches minimum and 1.063 inches maximum
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Features Provided
hermetically sealed case
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Overall Length
1.125 inches maximum
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Terminal Type And Quantity
3 tab, solder lug
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Test Data Document
81349-mil-s-19500 specification
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Non-Definitive Government Spec/Std Reference
mils19500-204
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Definitive Government Spec/Std Reference
jan2n1913
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Special Features
junction pattern arrangement: npnp
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Power Rating Per Characteristic
5.0 watts maximum peak gate power dissipation
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Internal Configuration
junction contact
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Inclosure Material
metal