2N1986

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N1986

5961-00-061-2055

5961 - Semiconductor Devices and Associated Hardware

Hybrid Semiconductors & Electronics

TRANSISTOR

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Mounting Method

    terminal

  • Overall Diameter

    0.370 inches maximum

  • Terminal Length

    1.500 inches minimum

  • Specification/Standard Data

    80131-release3455 professional/industrial association specification

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Special Features

    junction pattern arrangement: npn

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    600.0 milliwatts maximum collector power dissipation

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

  • Terminal Circle Diameter

    0.200 inches nominal

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Configuration

    junction contact

  • Overall Length

    0.250 inches nominal

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

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