1N670

Technical Characteristics

• Current Rating Per Characteristic

  54.00 milliamperes forward current, average outside diameter all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Voltage Tolerance In Percent

  -5.0/+5.0 all semiconductor device diode

• Component Function Relationship

  matched

• Component Name And Quantity

  2 semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air all semiconductor device diode

• Overall Diameter

  0.085 inches minimum all semiconductor device diode and 0.130 inches maximum all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Features Provided

  hermetically sealed case

• Overall Length

  0.230 inches minimum all transistor and 0.300 inches maximum all transistor

• Voltage Rating In Volts Per Characteristic

  68.0 nominal reverse breakdown voltage, dc all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Power Rating Per Characteristic

  400.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode and 1.500 inches maximum all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Function For Which Designed

  voltage regulator

• Special Features

  if one of the matched pair requires replacement,both must be replaced

• Semiconductor Material

  silicon all semiconductor device diode