5LV5511-102-27

Semiconductor Devices and Associated Hardware

TRANSISTOR

5LV5511-102-27

5961-00-069-3641

5961 - Semiconductor Devices and Associated Hardware

Eads Deutschland Gmbh -Verteidigung

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    45.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, emitter-to-base, collector open

  • Overall Length

    0.260 inches maximum

  • Power Rating Per Characteristic

    1.0 watts small-signal input power, common-collector minimum

  • Overall Diameter

    0.370 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Circle Diameter

    0.210 inches maximum

  • Current Rating Per Characteristic

    1.00 amperes source cutoff current maximum

  • Inclosure Material

    metal

  • Specification/Standard Data

    80131-release3644 professional/industrial association specification

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

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