215-00814-1

Technical Characteristics

• Maximum Power Dissipation Rating

  44.0 milliwatts

• Inclosure Configuration

  can

• Body Height

  0.165 inches minimum and 0.185 inches maximum

• Terminal Surface Treatment

  gold

• Output Logic Form

  diode-transistor logic

• Precious Material

  gold

• Precious Material And Location

  terminals gold

• Features Provided

  hermetically sealed and monolithic and positive outputs and low power and medium speed

• Body Outside Diameter

  0.335 inches minimum and 0.370 inches maximum

• Test Data Document

  80378-215-00814 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Design Function And Quantity

  2 gate, nand-nor

• Terminal Type And Quantity

  8 pin

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Inclosure Material

  glass and metal

• Time Rating Per Chacteristic

  40.00 nanoseconds nominal propagation delay time, low to high level output and 40.00 nanoseconds nominal propagation delay time, high to low level output

• Input Circuit Pattern

  dual 4 input

• Case Outline Source And Designator

  t0-99 joint electron device engineering council