USN2N1613
Semiconductor Devices and Associated Hardware
TRANSISTOR
USN2N1613
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
3.0 watts small-signal input power, common-collector preset
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Length
0.230 inches nominal
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Internal Junction Configuration
npn
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Diameter
0.312 inches nominal
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
75.0 maximum collector to base voltage, dc and 7.0 maximum emitter to base voltage, dc