128C507H01

Technical Characteristics

• Mounting Method

  terminal

• Terminal Circle Diameter

  0.200 inches nominal

• Overall Diameter

  0.335 inches minimum and 0.375 inches maximum

• Voltage Rating In Volts Per Characteristic

  60.0 maximum collector to emitter voltage, dc all transistor and 60.0 maximum collector to base voltage, dc all transistor and 5.0 maximum emitter to base voltage, dc all transistor

• Semiconductor Material

  silicon all transistor

• Features Provided

  hermetically sealed case

• Terminal Length

  1.500 inches minimum

• Current Rating Per Characteristic

  200.00 milliamperes source cutoff current maximum all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Component Name And Quantity

  2 transistor

• Special Features

  all transistor junction pattern arrangement: pnp

• Terminal Type And Quantity

  6 uninsulated wire lead

• Inclosure Material

  metal

• Overall Length

  0.180 inches maximum

• Power Rating Per Characteristic

  500.0 milliwatts small-signal input power, common-collector preset all semiconductor device diode