BS-2N1970
Semiconductor Devices and Associated Hardware
TRANSISTOR
BS-2N1970
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Thread Series Designator
unf
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Special Features
junction pattern arrangement: pnp
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Specification/Standard Data
80131-release3212 professional/industrial association specification
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Internal Configuration
junction contact
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Terminal Type And Quantity
3 tab, solder lug
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 50.0 maximum breakdown voltage, collector-to-emitter, base open and 40.0 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
93.0 watts small-signal input power, common-collector minimum
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Current Rating Per Characteristic
4.00 amperes source cutoff current minimum and 15.00 amperes source cutoff current maximum
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Inclosure Material
metal
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Semiconductor Material
germanium
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Overall Diameter
1.250 inches maximum
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Features Provided
hermetically sealed case
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Overall Length
0.520 inches maximum