1203-82

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

1203-82

5961-00-089-0689

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • Mounting Method

    terminal

  • Voltage Rating In Volts Per Characteristic

    60.0 maximum breakdown voltage, collector-to-emitter, base open all transistor and 60.0 maximum breakdown voltage, collector-to-base, emitter open all transistor and 6.0 maximum breakdown voltage, emitter-to-base, collector open all transistor

  • Overall Diameter

    0.230 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-71

  • Semiconductor Material

    silicon all transistor

  • Power Rating Per Characteristic

    250.0 milliwatts small-signal input power, common-collector minimum all transistor

  • Current Rating Per Characteristic

    30.00 milliamperes source cutoff current maximum all transistor

  • Overall Length

    0.210 inches maximum

  • Special Features

    all transistor junction pattern arrangement: npn

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Component Name And Quantity

    2 transistor

  • Terminal Type And Quantity

    6 uninsulated wire lead

  • Inclosure Material

    metal

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

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