FD1029FG
Semiconductor Devices and Associated Hardware
TRANSISTOR
FD1029FG
5961 - Semiconductor Devices and Associated Hardware
Gte Communication Systems Corp
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
-4.00 amperes source cutoff current minimum and -15.00 amperes source cutoff current blank
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Mounting Method
threaded stud
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Thread Series Designator
unf
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Special Features
junction pattern arrangement: pnp
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
-55.0 maximum collector to emitter voltage/static/base open and -80.0 maximum collector to base voltage/static/emitter open and -60.0 maximum emitter to base voltage, static, collector open
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Overall Length
0.520 inches maximum
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
150.0 watts small-signal input power, common-collector preset
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Semiconductor Material
germanium
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Terminal Type And Quantity
1 threaded stud and 2 tab, solder lug
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Inclosure Material
metal