FD-1029-HK
Semiconductor Devices and Associated Hardware
TRANSISTOR
FD-1029-HK
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.875 inches maximum
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Internal Configuration
junction contact
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Internal Junction Configuration
pnp
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Mounting Method
unthreaded hole
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~1
ollector to emitter voltage/static/base open and -50.0 maximum emitter to base v
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Power Rating Per Characteristic
50.0 watts maximum total power dissipation
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Overall Length
0.260 inches maximum
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Mounting Facility Quantity
2
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Electrode Internally-Electrically Connected To Case
collector
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Features Provided
hermetically sealed case
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Semiconductor Material
germanium
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~2
oltage, static, collector open
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Voltage Rating In Volts Per Characteristic
-100.0 maximum collector to base voltage/static/emitter open and -75.0 maximum c
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Current Rating Per Characteristic
-25.00 milliamperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Terminal Type And Quantity
2 tab, solder lug and 1 case