FD1029HS

Semiconductor Devices and Associated Hardware

TRANSISTOR

FD1029HS

5961-00-103-3827

5961 - Semiconductor Devices and Associated Hardware

Gte Communication Systems Corp

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    glass and metal

  • Overall Diameter

    0.875 inches maximum

  • Internal Configuration

    junction contact

  • Internal Junction Configuration

    pnp

  • Mounting Method

    unthreaded hole

  • Current Rating Per Characteristic

    20.00 milliamperes maximum collector cutoff current,dc,emitter open

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    2 tab,solder lug and 1 case

  • Power Rating Per Characteristic

    90.0 watts maximum total power dissipation

  • Voltage Rating In Volts Per Characteristic

    m60.0 maximum breakdown voltage,collector-to-base,emitter open

  • Semiconductor Material

    germanium

  • Features Provided

    hermetically sealed case

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Facility Quantity

    2

  • Overall Length

    0.350 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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