2N1485
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N1485
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Inclosure Material
metal
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Overall Length
0.330 inches maximum
-
Overall Diameter
0.650 inches maximum
-
Terminal Length
0.440 inches maximum
-
Terminal Circle Diameter
0.146 inches maximum
-
Semiconductor Material
silicon
-
Features Provided
hermetically sealed case
-
Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-base, emitter open and 40.0 maximum breakdown voltage, collector-to-emitter, base open and 12.0 maximum breakdown voltage, emitter-to-base, collector open
-
Special Features
junction pattern arrangement: npn
-
Internal Configuration
junction contact
-
Current Rating Per Characteristic
1.50 amperes source cutoff current minimum and 3.00 amperes source cutoff current maximum
-
Mounting Method
terminal
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Electrode Internally-Electrically Connected To Case
collector
-
Power Rating Per Characteristic
25.0 watts small-signal input power, common-collector minimum