2N965
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N965
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
150.0 milliwatts maximum total power dissipation
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Current Rating Per Characteristic
100.00 milliamperes maximum collector cutoff current, dc, emitter open
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Voltage Rating In Volts Per Characteristic
12.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum breakdown voltage, collector-to-emitter, base open and 2.0 maximum breakdown voltage, emitter-to-base, collector open
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Mounting Method
terminal
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Overall Diameter
0.290 inches nominal
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Terminal Type And Quantity
3 uninsulated wire lead
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Special Features
junction pattern arrangement: pnp
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Semiconductor Material
germanium
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.100 inches maximum
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Electrode Internally-Electrically Connected To Case
collector
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Internal Configuration
junction contact
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Terminal Length
0.500 inches minimum
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Overall Length
0.304 inches nominal
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Inclosure Material
metal