1214-363

Semiconductor Devices and Associated Hardware

TRANSISTOR

1214-363

5961-00-107-3986

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

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Technical Characteristics

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    1.573 inches maximum

  • Special Features

    junction pattern arrangement: pnp

  • Transfer Ratio

    180.0 maximum static forward current transfer ratio, common-emitter

  • Internal Configuration

    junction contact

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current maximum and 4.00 amperes source cutoff current minimum

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    150.0 watts small-signal input power, common-collector minimum

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Voltage Rating In Volts Per Characteristic

    80.0 maximum breakdown voltage, collector-to-base, emitter open and 7.0 maximum emitter to base voltage, static, collector open and 80.0 maximum breakdown voltage, collector-to-emitter, base open

  • Overall Height

    0.450 inches maximum

Certified to
AS6081 Methods

Implementing Quality Procurement

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Supplying Quality Products

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