SS3119
Semiconductor Devices and Associated Hardware
TRANSISTOR
SS3119
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Current Rating Per Characteristic
-1.00 amperes source cutoff current minimum and -3.00 amperes source cutoff current maximum
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Voltage Rating In Volts Per Characteristic
-300.0 maximum collector to base voltage/static/emitter open and -5.0 maximum emitter to base voltage, static, collector open and -300.0 maximum collector-to-emitter, resistance between base and emitter
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Special Features
junction pattern arrangement: pnp
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-37
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
30.0 watts small-signal input power, common-collector absolute
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Semiconductor Material
silicon
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Overall Height
0.260 inches maximum
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Function For Which Designed
switching
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Overall Length
0.666 inches minimum and 0.686 inches maximum
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Overall Width
0.390 inches maximum
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Mounting Method
unthreaded hole
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Inclosure Material
metal