185-2058P1-8608

Semiconductor Devices and Associated Hardware

TRANSISTOR

185-2058P1-8608

5961-00-110-9356

5961 - Semiconductor Devices and Associated Hardware

General Electric Co

TRANSISTOR

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Technical Characteristics

  • Electrode Internally-Electrically Connected To Case

    collector

  • Channel Polarity And Control Type (Non-Core)

    n-channel insulated gate type

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Current Rating Per Characteristic

    50.00 milliamperes source cutoff current minor

  • Overall Diameter

    0.230 inches maximum

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.210 inches maximum

  • Voltage Rating In Volts Per Characteristic

    40.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 40.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Semiconductor Material

    silicon

  • Terminal Length

    0.500 inches minimum

  • Internal Configuration

    field effect

  • Inclosure Material

    metal

  • Power Rating Per Characteristic

    1.8 watts small-signal input power, common-collector absolute

Certified to
AS6081 Methods

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