Q67000H113Z9

Technical Characteristics

• Output Logic Form

  transistor-transistor logic

• Inclosure Material

  plastic

• Body Length

  0.710 inches minimum and 0.770 inches maximum

• Inclosure Configuration

  dual-in-line

• Case Outline Source And Designator

  -0-001-aa joint electron device engineering council

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Design Function And Quantity

  2 gate, nand buffer

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Maximum Power Dissipation Rating

  52.0 milliwatts

• Features Provided

  monolithic and positive outputs and w/totem pole output

• Body Width

  0.240 inches minimum and 0.260 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  dual 4 input

• Time Rating Per Chacteristic

  22.00 nanoseconds maximum propagation delay time, low to high level output