2N3858

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3858

5961-00-112-3402

5961 - Semiconductor Devices and Associated Hardware

International Diode Corp

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    plastic

  • Mounting Method

    terminal

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Special Features

    junction pattern arrangement: npn

  • Current Rating Per Characteristic

    100.00 milliamperes maximum collector current, dc and 2.00 milliamperes maximum emitter current, dc

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, collector-to-base, emitter open and 30.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open

  • Semiconductor Material

    silicon

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.195 inches minimum and 0.205 inches maximum

  • Overall Length

    0.225 inches minimum and 0.265 inches maximum

  • Power Rating Per Characteristic

    200.0 milliwatts maximum collector power dissipation

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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